xmlui.ArtifactBrowser.SimpleSearch.filter.source:Scientific papers of the University of Pardubice. Series A, Faculty of Chemical Technology. 21/2015
ISSN:1211-5541
Abstract:
Nowadays, rare-earth-doped materials play an important role in photonics. The
reason can be seen in needs of present world for efficient data transfer, medical
use, construction of modern devices and in research progress. We report the
compositional dependence of Ga-Ge-Sb-S: Er3+ pulsed laser deposited (PLD)
chalcogenide films allowing the efficient Er3+: 4I13/2 → 4I15/2 (λ ≈ 1.5 μm) Stokes
and Er3+: 4I11/2 → 4I15/2 (λ ≈ 0.99 μm) anti-Stokes emissions at pumping wavelengths of 980 and 1 550 nm, respectively. It was found that the lowest
antimony and the highest sulphur contents in Ga-Ge-Sb-S films doped with 0.5 at.
% Er3+ are beneficial for both mentioned emissions. The photon up-conversion
emission was confidently observed in the case of PLD film with the highest content
of sulphur, i.e., (Ge17.8Ga3.6Sb3.6S75)99.5Er0.5. The shape of this emission band is
comparable with the photon up-conversion emission observed in the bulk sample.
We have also inspected the dependence of target material composition on
deposition rate of the PLD. The substitution of the antimony atoms with the
gallium atoms leads to lower deposition rate.
