The single-crystal structure of Bi2Te3 -Bi2Te3-xSx with a p-n junction was prepared by the heat treatment of p -Bi2Te3 in sulphur vapors.This structure was characterized by the measurement of the photovoltaic effect. The dependence of the photovoltage at 77 K on the wavelenght shows two speaks at 2.8 um (=0.44 eV) and at 1.9 um (=0.65 eV). The higher peak at 2.8 um (=0.44 eV) corresponds to the bandgap (Eg = 0.43 eV) of Bi8Te7S5. It is created probably by the electric field on the p-n junction at the interface of n -Bi8Te7S5 and deeper lying p -Bi2Te3-xSx with x0.15.
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p. 71-76
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eng
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Univerzita Pardubice
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dc.relation.ispartof
Scientific papers of the University of Pardubice. Series A, Faculty of Chemical technology. 7 (2001)
eng
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open access
eng
dc.subject
směsné telluridy
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dc.subject
struktura
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dc.subject
fotonapětí
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dc.subject
Měření
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dc.subject
Detekce
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dc.title
Investigation of Bi2Te3-Bi2Te3-xSx structures by photovoltage measurements