Investigation of Bi2Te3-Bi2Te3-xSx structures by photovoltage measurements

dc.contributor.author	Lošťák, Petr
dc.contributor.author	Drašar, Čestmír
dc.contributor.author	Toušek, Jiří
dc.contributor.author	Prokeš, Jan
dc.date.accessioned	2009-03-12T16:11:28Z
dc.date.available	2009-03-12T16:11:28Z
dc.date.issued	2002
dc.identifier	Univerzitní knihovna (studovna)	cze
dc.identifier.issn	1211-5541
dc.identifier.uri	http://hdl.handle.net/10195/32681
dc.description.abstract	The single-crystal structure of Bi2Te3 -Bi2Te3-xSx with a p-n junction was prepared by the heat treatment of p -Bi2Te3 in sulphur vapors.This structure was characterized by the measurement of the photovoltaic effect. The dependence of the photovoltage at 77 K on the wavelenght shows two speaks at 2.8 um (=0.44 eV) and at 1.9 um (=0.65 eV). The higher peak at 2.8 um (=0.44 eV) corresponds to the bandgap (Eg = 0.43 eV) of Bi8Te7S5. It is created probably by the electric field on the p-n junction at the interface of n -Bi8Te7S5 and deeper lying p -Bi2Te3-xSx with x0.15.	eng
dc.format	p. 71-76	cze
dc.language.iso	eng
dc.publisher	Univerzita Pardubice	cze
dc.relation.ispartof	Scientific papers of the University of Pardubice. Series A, Faculty of Chemical technology. 7 (2001)	eng
dc.rights	open access	eng
dc.subject	směsné telluridy	cze
dc.subject	struktura	cze
dc.subject	fotonapětí	cze
dc.subject	Měření	cze
dc.subject	Detekce	cze
dc.title	Investigation of Bi2Te3-Bi2Te3-xSx structures by photovoltage measurements	eng
dc.type	article	cze
dc.identifier.signature	47333
dc.peerreviewed	yes	eng
dc.publicationstatus	published	eng